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 STB85NF55, STI85NF55 STP85NF55
N-channel 55 V, 0.0062 80 A, TO-220, D2PAK, I2PAK , STripFETTM II Power MOSFET
Features
Type STB85NF55 STI85NF55 STP85NF55

VDSS 55 V 55 V 55 V
RDS(on) max < 0.008 < 0.008 < 0.008
ID 80 A 80 A 80 A
1 3 2
3
3 12
1
DPAK
Exceptional dv/dt capability 100% avalanche tested
TO-220
IPAK
Applications
Switching application - Automotive environment Figure 1. Internal schematic diagram
Description
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Table 1.
Device summary
Marking B85NF55 I85NF55 P85NF55 Package DPAK IPAK TO-220 Packaging Tape and reel Tube Tube
Order code STB85NF55 STI85NF55 STP85NF55
October 2009
Doc ID 8405 Rev 9
1/15
www.st.com 15
Contents
STB/I/P85NF55
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 55 20 80 80 320 300 2.0 10 980 -55 to 175 Unit V V A A A W W/C V/ns mJ C
ID(1) IDM
(2)
PTOT
dv/dt (3) Peak diode recovery voltage slope EAS
(4)
Single pulse avalanche energy Operating junction temperature Storage temperature
TJ Tstg
1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD 80 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting TJ = 25 C, ID = 40 A, VDD = 37.5 V
Table 3.
Symbol
Thermal data
Parameter Value 0.5 62.5 300 Unit C/W C/W C
Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max. Tl Maximum lead temperature for soldering purpose(1)
1. 1.6mm from case for 10sec
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Electrical characteristics
STB/I/P85NF55
2
Electrical characteristics
(TCASE= 25 C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 20 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 40 A 2 3 0.0062 Min. 55 1 10 100 4 0.008 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V, ID = 40 A VDS =25 V, f = 1 MHz, VGS = 0 Min. Typ. 120 3700 900 310 120 30 45 150 Max. Unit S pF pF pF nC nC nC
-
VDD = 60 V, ID = 80 A VGS =10 V
-
1. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 30 V, ID= 40 A, RG=4.7 , VGS=10 V Figure 14 on page 8 Min. Typ. 25 100 70 35 Max. Unit ns ns ns ns
-
-
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STB/I/P85NF55
Electrical characteristics
Table 7.
Symbol ISD ISDM VSD
(1) (2)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100 A/s, VDD = 25 V, TJ = 150 C Figure 16 on page 8 Test conditions Min 75 210 5.5 Typ. Max 80 320 1.5 Unit A A V ns nC A
trr Qrr IRRM
-
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STB/I/P85NF55
2.1
Figure 2.
ID (A)
Electrical characteristics (curves)
Safe operating area
GC93850
Figure 3.
Thermal impedance
GC93840
K
100
10
10
-1
1
0.1 0.1
10 1 10 100 VDS(V)
-2
10
-5
10 -4
10 -3
10 -2
10
-1
tp(S)
Figure 4.
ID (A) 320
Output characteristics
GC93620
Figure 5.
ID (A) 256
Transfer characteristics
GC93630
240
192
160
128
80
64
0 0
4
8
12
16
VDS(V)
0 0
2
4
6
8
VGS(V)
Figure 6.
GFS (S) 40
Transconductance
GC93640
Figure 7.
RDS(on) () 6.4
Static drain-source on resistance
GC93650
30
6.3
20
6.2
10
6.1
0
4
8
12
16
6.0 ID(A) 0
20
40
60
80
ID(A)
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STB/I/P85NF55 Figure 8.
VGS (V) 16
Electrical characteristics Capacitance variations
GC93670
Gate charge vs gate-source voltage Figure 9.
GC93660
C (pF) 8000
12
6000
8
4000
4 0 0 30
2000
60
90
120
Qg(nC)
0
10
20
30
40
VDS(V)
Figure 10. Normalized gate threshold voltage vs temperature
VGS(th) (norm) 1.2
GC93680
Figure 11. Normalized on resistance vs temperature
RDS(on) (norm) 1.8
GC93690
1.0
1.4
0.8
1.0
0.6
0.6
0.4 -50 0 50 100 TJ(C)
0.2 -50 0 50 100 TJ(C)
Figure 12. Source-drain diode forward characteristics
VSD (V) 1.2
GC93700
Figure 13. Normalized BVDSS vs temperature
BVDSS (norm) 1.10
GC93710
0.9
1.05
0.6
1.00
0.3
0.95 0.90 0 20 40 60 80 ISD(A) -50 0 50 100 TJ(C)
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Test circuits
STB/I/P85NF55
3
Test circuits
Figure 15. Gate charge test circuit
VDD 12V
2200
Figure 14. Switching times test circuit for resistive load
47k 100nF
1k
RL VGS VD RG PW D.U.T.
F
3.3 F
VDD Vi=20V=VGMAX
2200 F
IG=CONST 100 2.7k 47k PW 1k
AM01469v1
D.U.T. VG
AM01468v1
Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit
A D G S B 25 D.U.T.
A FAST DIODE B
A L=100H B D G 3.3 F 1000 F
L
VD
2200 F
3.3 F
VDD
VDD
ID
RG
S
Vi
D.U.T.
Pw
AM01470v1 AM01471v1
Figure 18. Unclamped inductive waveform
V(BR)DSS VD
IDM ID VDD VDD
AM01472v1
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Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Doc ID 8405 Rev 9
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Package mechanical data
STB/I/P85NF55
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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STB/I/P85NF55
Package mechanical data
IPAK (TO-262) mechanical data
mm Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050
inch Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055
Doc ID 8405 Rev 9
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Package mechanical data
STB/I/P85NF55
DPAK (TO-263) mechanical data
mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334
inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8
0079457_M
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Packaging mechanical data
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
Doc ID 8405 Rev 9
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Revision history
STB/I/P85NF55
6
Revision history
Table 8.
Date 21-Jun-2004 01-Oct-2009
Document revision history
Revision 8 9 Changes Updated SOA and application. Added new device in IPAK
14/15
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STB/I/P85NF55
Please Read Carefully:
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